Laboratory of Electron Microscopy


Laboratory of Electron Microscopy


Dual beam electron scanning microscope with Schottky cathode.









Scanning electron microscope  Tescan Lyra III with focused ion beam is aimed for imaging, analyzing and patterning of sample surface.  


The tool consist of vacuum chamber, electron column and ion column.  


Working pressure in the chamber is about 3*10-2 Pa during operation.


The tool has 5 axes motorized sample holder.


Complete tool is controlled by computer.




  • Electron gun  – Schottky auto-emission cathode.


    • Acceleration voltage 200 eV  30KeV.

    • Minimum resolution at 30KeV less than 3 nm.

    • Working distance 2 mm – 80 mm


  • Ion gun – Ga+ ions .


    • Maximal cancelation voltage  30KeV

    • Maximal ion current  2 µA.

    • Minimal resolution at 30KeV 10 nm.


  • Low vacuum mode  


    • Working at pressure 50 Pa


  • Detectors


    • Secondary  electrons detector

    • Backscattering electrons detector

    • Transmitted electrons detector

    • Cathode luminescence

    • Energy dispersion spectrum detector (EDS).  

    • Low vacuum secondary electrons detector


  • Gas Injection System .


    • DIrect deposition of Pt, W SiOx form gas by FIB/EB assisted deposition

    • Minimal size of deposited structure < 100nm.

    • Selective etch by assistance of XeF2 and H2O


  • Nanomanipulator


    • 3 directions movement  

    • Accuracy  < 1 nm


      Staff: Leonid Satrapinskyy, PhD.












           To prepare thestructuresize > 1 micrometer we use photolithograph JUB– 2 ofGerman production  . This deviceis equipped with abroad spectrumUVlamp200W. Maximum substrate size on which we canexpose is 2 „DIA. It is acontactlithography method, whichuses glass maskswith metal(Cr) structures. Maskscan be usedpositivelyand negatively.


           In the preparation ofmicrostructuresby means ofphotolithography we usually usethesephotoresists: AZ 1512 HS  – for wet etching, AZ 6624 – for dry etching, AZ 5214 E.- for Lift-off




Shownstructureswere prepared byphotolithographyon our department.




B4                        maska3





Detail of resistance bridge prepared by photolithography. 



Detail of photolithographic mask.  

















Detail of structure prepared by three degree lithography (Lift-off).









Responsible person:  Milan Kubinec  email:








Electron beam lithography






Scanning electron microscopeequipped with electron beam lithographVegaIISBH (fy Tescan, CZ)works withaccelerating voltagein the range of5 kVto30 kV. The primaryelectronbeamis emitted bythermoemission tungstencathode. The vacuumchamberispump down to the limitpressure<10-3 Pa.




Thisequipment is primarily used for the preparation ofsub-micrometer scalestructures(<1 micron). The standardsample sizeon whichwe prepare structuresis1×1cm(max.2×2 cm). Graphic design(data) structures are prepared insoftwareDraw beam“which isincluded with the device.




In the processof electron beam lithographywe work withboth types ofresists (positive andnegative). Mainly used positive resists are  PMMA_A2, ARP679.04 andnegative resists SU8 2002, SU-8 2000.5, AZnLof2070.




Shownstructureswere prepared byEBLon our department. 










Detail of the meander structure  in SU-8 resist on Si substrate (Negative tone resist fy Microchem). The linewidth ~120 nm.





Detail of the Pt comb electrodes for gas sensors preparedby using SU-8 resist and ion etching. The linewidth ~ 300 nm.
















































Detail of columns in nLOF AZ 2070 negative tone resist, the thickness  200 nm, the diameter 120 nm.
































Scanning electron microscope with electron beam lithograph Vega II SBH fy Tescan.




Responsible person:  Pavol Ďurina  email: